Factory Lead Time  

15 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

75A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

140W Tc

Turn Off Delay Time  

38 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2004

JESD-609 Code  

e3

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

5.5MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Voltage - Rated DC  

75V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Current Rating  

75A

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

140W

Case Connection  

DRAIN

Turn On Delay Time  

16 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

5.5m Ω @ 75A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

100nC @ 10V

Rise Time  

130ns

Vgs (Max)  

±20V

Fall Time (Typ)  

77 ns

Continuous Drain Current (ID)  

75A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

40V

Pulsed Drain Current-Max (IDM)  

470A

Avalanche Energy Rating (Eas)  

220 mJ

Recovery Time  

35 ns

Height  

4.83mm

Length  

10.67mm

Width  

9.65mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free